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Tunable multiferroic properties of Mn substituted BiFeO3 thin films |
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| Affiliation: | 1. Functional Nanomaterials Research Lab, Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, Uttarakhand, India;2. Functional Materials Division, Solid State Physics Lab (SSPL), DRDO, Lucknow Road, Timarpur, Delhi 110054, India;1. Solid State Physics Laboratory, DRDO, Lucknow Road, Timarpur, Delhi 110054, India;2. Department of Physics, IIT Delhi, Hauz Khas, New Delhi 110016, India;1. Nanomagnetism and Microscopy Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, 502285, Telangana, India;2. Defence Metallurgical Research Laboratory, Hyderabad, 500058, India |
| Abstract: | The current study explored the influence of Mn substitution on the electrical and magnetic properties of BiFeO3 (BFO) thin films synthesized using low cost chemical solution deposition technique. X-ray diffraction analysis revealed that pure rhombohedral phase of BiFeO3 was transformed to the tetragonal structure with P4mm symmetry on Mn substitution. A leakage current density of 5.7×10?4 A/cm2 which is about two orders of magnitude lower than pure BFO was observed in 3% Mn doped BFO thin film at an external electric field >400 kV/cm. A well saturated (p-E) loops with saturation polarization (Psat) and remanent polarization (2Pr) as high as 60.34 µC/cm2 and 25.06 µC/cm2 were observed in 10% Mn substituted BFO thin films. An escalation in dielectric tunability (nr), figure of merit (K) and quality factor (Q) were observed in suitable Mn doped BFO thin films. The magnetic measurement revealed that Mn substituted BFO thin films showed a large saturation magnetization compared to pure BFO thin film. The highest saturation ~31 emu/cc was observed for 3% Mn substituted BFO thin films. |
| Keywords: | Thin films X-ray diffraction Leakage Magnetization |
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