Mixed grains and orientation-dependent piezoelectricity of polycrystalline Nd-substituted Bi4Ti3O12 thin films |
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| Affiliation: | 1. School of Mechanical Engineering, Chengdu University, Chengdu, 610106, China;2. College of Architecture and Environment, Sichuan University, Chengdu, 610065, China;3. College of Aeronautics and Astronautics, Sichuan University, Chengdu, 610065, China;4. College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China;5. School of Engineering, University of Liverpool, Liverpool, L69 3GQ, UK;1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, 710049, China;2. State Key Laboratory for Mechanical Manufacturing System, Xi’an Jiaotong University, Xi’an, 710049, China;1. Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering, East China Normal University, Shanghai, 200241, China;2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China;1. Universidad Nacional de Colombia, sede Bogotá, Bogotá, Colombia;2. Universidad Santo Tomás, Bogotá, Colombia;3. Universidad Nacional de Colombia, sede Manizales, Manizales, Colombia;4. CINVESTAV Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, 76230 Querétaro, Qro., Mexico;1. Department of Physics, University of San Carlos, Talamban Campus, Cebu City 6000, Philippines;2. School of Engineering, Monash University Malaysia, Bandar Sunway, Selangor 47500, Malaysia;3. Department of Physics, Fu Jen Catholic University, New Taipei City 24205, Taiwan |
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| Abstract: | Polycrystalline Bi3.15Nd0.85Ti3O12 (BNT) thin films were prepared on Pt/Ta/glass substrates by a pulsed laser deposition method. X-ray diffraction measurements revealed that the BNT thin films were preferentially oriented along the (117) direction although they possessed a polycrystalline structure. Good ferroelectric properties of the BNT thin film were observed with a remnant polarization of 13 μC/cm2 (2 Pr ~26 μC/cm2). The fatigue resistance test exhibited that the ferroelectric polarization of the BNT thin film degraded significantly after around 109 switching cycles, which can be attributed to its crystal structure. We investigated the surface morphology and ferroelectric domain structure by atomic force microscopy (AFM) and piezoresponse force microscopy (PFM), respectively. Interestingly, mixed grains consisting of long and circular shapes were observed on the BNT film surface, which corresponded to a- and c-axes orientations of crystal growth, respectively. The PFM study revealed that the piezoelectric coefficient (d33) of the long grains was much larger than that of the circular grains. |
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| Keywords: | Films Ferroelectric properties Piezoelectric properties Capacitors Grains |
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