Resistive switching characteristics of sputtered AlN thin films |
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| Affiliation: | 1. Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC;2. Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan, ROC;3. Center for Micro/NanoScience and Technology, National Cheng Kung University, Tainan 70101, Taiwan, ROC |
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| Abstract: | AlN thin films were deposited on Pt/Ti/SiO2/Si substrates using a radio-frequency magnetron sputtering technique. The effect on the switch current–voltage characteristics of four different materials in the electrode fabricated on top of the AlN film was investigated. The deposition time and nitrogen content in the sputtering atmosphere were changed to adjust the thickness and composition of the AlN thin films, respectively. The influence of film thickness and content on the resistive switching behavior was discussed. The possible mechanism of resistive switching was examined via analyses of the electrical resistive switching characteristics, forming voltage, and on/off current ratio. |
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| Keywords: | AlN Sputtering Resistive random access memory (RRAM) Resistive switching |
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