Structural,optical and electrical properties of low temperature grown undoped and (Al,Ga) co-doped ZnO thin films by spray pyrolysis |
| |
| Affiliation: | 1. Department of Chemical and Forensic Sciences, Botswana International University of Science and Technology (BIUST), P/Bag 16, Palapye, Botswana;2. Materials Research laboratory, Department of Physics and Astronomy, (BIUST), P/Bag 16, Palapye, Botswana;1. Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641 020, Tamil Nadu, India;2. Department of Physics, Adhiyamaan College of Engineering, Hosur 635 109, Tamilnadu, India;3. Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India;4. Department of Physics, National Institute of Technology, Tiruchirappalli 620 015, Tamil Nadu, India;5. Department of Physics, KPR Institute of Engineering and Technology, Coimbatore 641 407, Tamil Nadu, India;1. School of Electronics Engineering, KIIT University, Campus-3, Patia, Bhubaneswar, Orissa 751024, India;2. School of Applied Sciences, KIIT University, Campus-3, Patia, Bhubaneswar 751024, India;1. Material Sciences Department, Faculty of Science, University of Biskra, Biskra 07000, Algeria;2. VTRS Laboratory, Institute of Technology, University of El-Oued, El-Oued 39000, Algeria;3. Mechanics Department, Faculty of Technology, University of Tébessa, Tébessa 12000, Algeria;1. Department of Physics and Mathematics, Hunan Institute of Technology, Hengyang 421002, PR China;2. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, PR China |
| |
| Abstract: | Aluminum and gallium co-doped ZnO (AGZO) thin films were grown by simple, flexible and cost-effective spray pyrolysis method on glass substrates at a temperature of 230 °C. Effects of equal co-doping with aluminum (Al) and gallium (Ga) on structural, optical and electrical properties were investigated by X-ray diffraction (XRD), UV–vis–NIR spectrophotometry and Current–Voltage (I–V) measurements, respectively. XRD patterns showed a successful growth with high quality polycrystalline films on glass substrates. The predominant orientation of the films is (002) at dopant concentrations ≤2 at% and (101) at higher dopant concentrations. Incorporation of Al and Ga to the ZnO crystal structure decreased the crystallite size and increased residual stress of the thin films. All films were highly transparent in the visible region with average transmittance of 80%. Increasing doping concentrations increased the optical band gap, from 3.12 to 3.30 eV. A blue shift of the optical band gap was observed from 400 nm to 380 nm with increase in equal co-doping. Co-doping improved the electrical conductivity of ZnO thin films. It has been found from the electrical measurements that films with dopant concentration of 2 at% have lowest resistivity of 1.621×10?4 Ω cm. |
| |
| Keywords: | A AGZO films C Optical properties C Electrical properties D ZnO |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
