Enhanced dielectric loss of Mg doped Ba0.7Sr0.3TiO3 ceramics |
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| Affiliation: | 1. Solid State Physics Laboratory, Lucknow Road, Delhi 110054, India;2. Sri Venkateswara College, University of Delhi, Dhaula Kuan, New Delhi 110021, India;1. Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, Monastir, 5019, Tunisia;2. Laboratoire de Physique appliqué, Département de physique, Faculté des sciences de Sfax, 3018, Tunisia;3. Université Tunis el Manar, Laboratoire de nanomatériaux et des systèmes pour les energies renouvelables, Centre de Recherches et des Technologies de l’Energie, BP.95 Hammam Lif, 2050, Tunisia;4. Laboratoire des recherches en énergie et matière pour le développement des sciences nucléaires, CNSTN, Sidi Thabet, 2020, Tunisia;5. Laboratoire de Science et Génie des Matériaux, Faculté de Génie Mécanique et Génie des Procédés, Université des Sciences et de la Technologie Houari Boumediene, BP32 El Alia, Bab Ezzouar, 16111, Alger, Algeria;6. Institut Néel, CNRS-Université J. Fourier, B.P. 166, 38042, Grenoble, France;1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, PR China;2. Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Wuhan 430074, PR China;3. Shen Zhen Zhen Hua Ferrite & Ceramic Electronics Co., Ltd., Shenzhen 518109, PR China;1. Key laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People''s Republic of China;2. Kunming Institute of Physics, Kunming 650223, People''s Republic of China;1. Faculty of Engineering and Natural Sciences, Sabancı University, Orhanlı/Tuzla, 34956 Istanbul, Turkey;2. National Institute of Materials Physics, Atomistilor 105bis, Magurele, 077125 Romania;3. Integrated Manufacturing Technologies Research and Application Center, Sabanci University, Tuzla, 34956 Istanbul, Turkey;4. Sabancı University Nanotechnology Application Center, Orhanlı/Tuzla, 34956 Istanbul, Turkey |
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| Abstract: | The effect of MgO doping on the structural, microstructural and dielectric properties of Ba0.7Sr0.3TiO3 (BST) ceramic from the point of view of its application in microwave tunable devices has been studied. All the samples crystallize into perovskite structure. There is significant reduction in the value of loss factor with the increase in Mg-level, the dielectric constant and tunability are also reduced with the increase in Mg-level. Interestingly, the Fig. of merit of the material is found to be enhanced with increase of Mg-doping. The observed dielectric properties are explained on the basis of defect chemistry involved when Mg is doped in Ba0.7Sr0.3TiO3 ceramics. The effect of dc field on the dielectric constant and the dielectric breakdown strength of the paraelectric phase Mg doped BST ceramic samples are also studied. |
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| Keywords: | A. Sintering B. Grain size C. Dielectric properties D. Perovskites |
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