首页 | 本学科首页   官方微博 | 高级检索  
     


Electronic structure of transparent conducting Mo-doped indium oxide films grown by polymer assisted solution process
Affiliation:1. Department of Physics, Dongguk University, Seoul 04620, Republic of Korea;2. Division of Advanced Materials Engineering, Kongju National University, Cheonan, Chungchungnam-do 32588, Korea;3. Department of R&D Center, SNTEK Co., Suwon, Gyeonggi-do 16643, Korea;1. School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, PR China;2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, PR China;1. School of Transportation Civil Engineering, Shandong Jiaotong University, Jinan 250357, China;2. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;1. Research Center for Neutron Science and Technology, Comprehensive Research Organization for Science and Society (CROSS), Tokai, Ibaraki 319-1106, Japan;2. Materials and Life Science Division, J-PARC Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan;3. Institute for Materials Research, Tohoku University, Katahira, Sendai 985-8577, Japan;1. Merck KGaA, Frankfurter Straße 250, Darmstadt, D – 64293, Germany;2. Eduard-Zintl-Institut für Anorganische Chemie TU Darmstadt, Alarich-Weiss-Str. 12, Darmstadt, D – 64287, Germany
Abstract:
Keywords:Molybdenum doped indium oxide  Electronic structure  Transparent conducting oxide  Chemical bonding states  Conduction band offset
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号