Effects of annealing temperature on the microstructure,ferroelectric and dielectric properties of W-doped Na0.5Bi0.5TiO3 thin films |
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| Affiliation: | 1. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China;1. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China;1. Shenzhen Key Laboratory of Advanced Materials, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518 055, People’s Republic of China;2. Nanotechnology Laboratory, Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Madras, Chennai 600 036, India;1. Department of Metallurgical Engineering & Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India;2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India;1. School of Materials Science and Engineering, University of Jinan, Jinan, 250022, China;2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan, 250022, China;1. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;2. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;3. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, China;1. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China |
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| Abstract: | The effects of annealing temperature on the structure, morphology, ferroelectric and dielectric properties of Na0.5Bi0.5Ti0.99W0.01O3+δ (NBTW) thin films are reported in detail. The films are deposited on indium tin oxide/glass substrates by a sol-gel method and the annealing temperature adopted is in the range of 560–620 °C. All the films can be well crystallized into phase-pure perovskite structures and show smooth surfaces without any cracks. Particularly, the NBTW thin film annealed at 600 °C exhibits a relatively large remanent polarization (Pr) of 20 μC/cm2 measured at 750 kV/cm. Additionally, it shows a high dielectric constant of 608 and a low dielectric loss of 0.094 as well as a large dielectric tunability of 62%, making NBTW thin film ideal in the room-temperature tunable device applications. |
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| Keywords: | Ferroelectrics Thin film High-valence-ion substitution Annealing temperature Electrical property |
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