Effect of annealing temperature and graphene concentrations on photovoltaic and NIR-detector applications of PbS/rGO nanocomposites |
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| Affiliation: | 1. Department of Physics, Masjed-Soleiman Branch, Islamic Azad University (I.A.U), Masjed-Soleiman, Iran;2. Department of Chemistry, Shahid Sherafat, University of Farhangian, 15916 Tehran, Iran;3. Department of Electrical Engineering, Mahshahr Branch, Islamic Azad University (I.A.U), Mahshahr, Iran;4. Young Researchers and Elite Club, Ahvaz Branch Islamic Azad University, Ahvaz, Iran;5. Advanced Surface Engineering and Nano Materials Research Center, Department of Physics, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran;6. Department of Physics, University of Sistan and Baluchestan, 98135-674 Zahedan, Iran;1. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;2. Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105, Russia;3. Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 111005, Russia;4. Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580, Japan;5. Laboratory of 2D Materials’ Optoelectronics, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia;6. Department of Electrical Engineering, University at Buffalo, Buffalo, NY 1460-1920, USA;7. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;1. Department of Fusion Chemical Engineering, Hanyang University, Ansan 426-791, Republic of Korea;2. Department of Physics, Gyeongsang National University, Jinju 660-701, Republic of Korea;1. Department of Physics, Faculty of Science for Girls, King Abdulaziz University, Jeddah, Saudi Arabia;2. Department of Physics, Faculty of Science, Firat University, Elazig, Turkey;3. Nanoscience and Nanotechnology Laboratory, Firat University, Elazig, Turkey;1. Department of Electrical Engineering, Bushehr Branch, Islamic Azad University, Bushehr, Iran;2. Advanced Surface Engineering and Nano Materials Research Center, Department of Physics, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran;1. Electrical Engineering Department, Escuela Superior de Ingeniería UCA, Avenida Universidad de Cádiz, 10, 11519 Puerto Real (Cádiz), Spain;2. Electrical Engineering Department, Escuela Politécnica Superior de Ingeniería UCA, Avenida Ramón Puyol S/N, 11202 Algeciras (Cádiz), Spain;3. Environmental Department, CASEM UCA, Polígono Río San Pedro S/N, 11510 Puerto Real (Cádiz), Spain |
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| Abstract: | The effect of annealing temperature on photovoltaic and near-infrared (NIR) detector applications of PbS nanoparticles (NPs) and PbS/graphene nanocomposites was investigated. The products were synthesized by a simple co-precipitation method and graphene oxide (GO) sheets were used as graphene source. Several characterization techniques were used to show transfer of the GO into reduced graphene oxide (rGO) during the synthesis process. In addition, the effect of graphene concentrations on morphology, structure, photovoltaic, and detector parameters of the samples were studied. Transmission electron microscope (TEM) images showed that, the PbS NPs were agglomerated, while, the PbS/rGO nanocomposites were dispersed completely after annealing under H2/Ar gas atmosphere. UV–visible spectrometer showed an absorption peak for all samples in the near infrared red (NIR) region of the electromagnetic spectrum. The results indicated that, photocurrent intensity, responsivity of the samples to an NIR source, and solar-cell efficiency were affected by annealing of samples and graphene concentrations. |
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| Keywords: | B Nanocomposites C Optical properties PbS/rGO NIR detector Solar-cells |
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