Low-temperature fabrication of sol–gel NiO film for optoelectronic devices based on the ‘fuel’ of urea |
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| Affiliation: | 1. Key Laboratory for Micro-Nano Energy Storage and Conversion Materials of Henan Province, Institute of Surface Micro and Nano Materials, Xuchang University, Xuchang 461000, PR China;2. College of Chemistry and Chemical Engineering, Zhoukou Normal University, Zhoukou, Henan Province 466001, PR China;1. Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea;2. Department of Chemistry, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, South Korea;3. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin-si, Gyeonggi-do 26035, South Korea;4. Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea;5. Department of Chemical Engineering, Hanyang University, 222 Wangsimri-ro, Seongdonggu, Seoul 04763, South Korea;1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, PR China;2. State Key Laboratory of Marine Resource Utilization in South China Sea, College of Materials and Chemical Engineering, Hainan University, Haikou 570228, PR China;1. Advanced Material Analysis and Test Centre, Xi’an University of Technology, Xi’an 710048, PR China;2. School of Material Science and Engineering, Xi’an University of Technology, Xi’an 710048, PR China |
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| Abstract: | In this work, NiO coating is fabricated by a low temperature ‘combustion process’ driven by ‘chemical oven’ on quartz and indium tin oxide (ITO) substrates followed by an annealing process in air at 225 °C for 2 h. The NiO coating is analyzed by means of thermalgravimetric differential thermal analysis (TG-DTA), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electric microscopy (SEM), atomic force microscope (AFM), and UV–visible spectrometer. A prelimilary photovoltaic performance measurement of the fabricated device (ITO/NiO/poly-TPD/PC71BM/Al) shows a short circuit current density (Jsc) of 5.28 mA cm?2 and power conversion efficiency (PCE) of 1.56% under an illumination of 100 mW cm?2. The PCE of device with combustion NiO HTLs is almost 10-fold higher than those of the devices based on common NiO HTLs. The combustion fabricated NiO coating may provide an effective approach to fabricate other NiO-based optoelectrical devices at relative low temperature. |
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| Keywords: | NiO films Chemical oven Urea Combustion process Optoelectronic |
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