Characterization of single crystalline a-TiO2 films on MgAl2O4(100) substrates by MOCVD |
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| Affiliation: | 1. Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai 600036, India;2. Department of Materials Physics, ELTE Eötvös Loránd University, Pázmány Péter sétány 1/A., Budapest H-1117, Hungary;1. School of Chemical & Biotechnology Engineering, SASTRA University, Tirumalaisamudram, Thanjavur 613 401, India;2. Advanced Materials Research Group, Computational Nanoscience & Technology Laboratory, ABV-Indian Institute of Information Technology & Management Gwalior (M.P.), Gwalior 474 015, India;3. School of Electrical & Electronics Engineering, SASTRA University, Tirumalaisamudram, Thanjavur 613 401, India |
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| Abstract: | Anatase phase TiO2 (a-TiO2) films have been deposited on MgAl2O4(100) substrates at the substrate temperatures of 500–650 °C by the metal organic chemical vapor deposition (MOCVD) method using tetrakis-dimethylamino titanium (TDMAT) as the organometallic (OM) source. The structural analyses indicated that the TiO2 film prepared at 600 °C had the best single crystalline quality with no twins. The out-of-plane and in-plane epitaxial relationships of the film were a-TiO2(001)||MgAl2O4(100) and TiO2[100]||MgAl2O4[100], respectively. A uniform and compact surface with stoichiometric composition was also obtained for the 600 °C-deposited sample. The average transmittance of all the TiO2 films in the visible range exceeded 91% and the optical band gap of the films varied from 3.31 to 3.41 eV. |
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| Keywords: | MOCVD TDMAT |
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