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Study of Cu-based Al-doped ZnO multilayer thin films with different annealing conditions
Affiliation:1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan;2. Department of Computer and Communication, Kun Shan University, Tainan 71003, Taiwan;3. Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan;4. Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan;1. Department of Audiology, School of Health, Turgut Özal University, Ankara, Turkey;2. Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay, Turkey;3. Department of Metallurgical and Materials Engineering, Faculty of Technology, Iskenderun Technical University, Hatay, Turkey;1. Department of Mechanics, Damavand Branch, Islamic Azad University, Damavand, Iran;2. Advanced Materials Research center, Faculty of Materials Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Iran;3. Department of Mathematics, Islamic Azad University, Isfahan (Khorasgan) Branch, Isfahan, Iran;1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China;2. Graduate School of Chinese Academy of Science, Beijing 100039, PR China;1. College of Materials Science and Engineering, Hunan University, Changsha 410082, China;2. College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018, China;1. Key Laboratory of Resource Clean Conversion in Ethnic Regions, Education Department of Yunnan, Yunnan Minzu University, Kunming 650500, PR China;2. Joint Research Centre for International Cross-border Ethnic Regions Biomass Clean Utilization in Yunnan, Yunnan Minzu University, Kunming 650500, PR China;1. Department of Physics, Birla Institute of Technology, Mesra, Ranchi 835215, India;2. Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi 835215, India
Abstract:AZO/Cu/AZO multilayer thin films produced under different annealing conditions are studied in this paper, to examine the effects of atmosphere and annealing temperature on their optical and electrical properties. The multilayer thin films are prepared by simultaneous RF magnetron sputtering (for AZO) and DC magnetron sputtering (for Cu). The thin films were annealed in a vacuum or an atmosphere of oxygen at temperatures ranging from 100 to 400 °C in steps of 100 °C for 3 min. High-quality multilayer films (at Cu layer thickness of 15 nm) with resistivity of 1.99×10−5 Ω-cm and maximum optical transmittance of 76.23% were obtained at 400 °C annealing temperature in a vacuum. These results show the films to be good candidates for use as high quality electrodes in various displays applications.
Keywords:Multilayer  AZO/Cu/AZO  Rf sputter  Thin films  Annealing conditions
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