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造孔剂含量对树脂结合剂硅片减薄砂轮磨削性能的影响
引用本文:惠珍,赵延军,张高亮,赵炯,丁玉龙,叶腾飞,孙冠男,熊华军. 造孔剂含量对树脂结合剂硅片减薄砂轮磨削性能的影响[J]. 金刚石与磨料磨具工程, 2019, 39(4): 62-65. DOI: 10.13394/j.cnki.jgszz.2019.4.0010
作者姓名:惠珍  赵延军  张高亮  赵炯  丁玉龙  叶腾飞  孙冠男  熊华军
作者单位:郑州磨料磨具磨削研究所有限公司,郑州 450001;超硬材料磨具国家重点实验室,郑州 450001;郑州磨料磨具磨削研究所有限公司,郑州,450001
摘    要:为改善硅片背面减薄效果,在树脂结合剂硅片减薄砂轮里添加造孔剂。通过体积密度测试、扫描电镜观察和磨削实验,研究造孔剂含量对树脂结合剂砂轮结构和磨削性能的影响。结果表明:随着造孔剂体积分数增加、投料比降低,砂轮内部孔隙率增大;且磨削实验证明造孔剂可以提高硅片的表面质量。当造孔剂添加体积分数在10%、体积密度投料比控制在75%时,树脂结合剂硅片减薄砂轮在磨削过程中具有较好的综合磨削性能,磨削出来的硅片表面粗糙度Ra、Rz、Ry值波动范围小,与其他条件下的砂轮磨削的硅片相比,表面一致性好。 

关 键 词:硅片背面减薄砂轮  气孔率  磨纹  哈量粗糙度值

Influence of pore-forming agent content on grinding performance of resin-bonded silicon wafer thinning wheel
HUI Zhen,ZHAO Yanjun,ZHANG Gaoliang,ZHAO Jiong,DING Yulong,YE Tengfei,SUN Guannan,XIONG Huajun. Influence of pore-forming agent content on grinding performance of resin-bonded silicon wafer thinning wheel[J]. Diamond & Abrasives Engineering, 2019, 39(4): 62-65. DOI: 10.13394/j.cnki.jgszz.2019.4.0010
Authors:HUI Zhen  ZHAO Yanjun  ZHANG Gaoliang  ZHAO Jiong  DING Yulong  YE Tengfei  SUN Guannan  XIONG Huajun
Affiliation:1. Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd., Zhengzhou 450001, China;2. State Key Laboratory of Superabrasives, Zhengzhou 450001, China
Abstract:In order to improve the thinning effect on the back of silicon wafer, a pore-forming agent was added into the resin-bonded silicon wafer thinning wheel. The effects of pore-forming agent content on the structure and grinding performance of resin-bonded grinding wheel were studied by volume density measurement, SEM observation and grinding experiments.The results show that with the increase of pore-forming agent volume fraction and the decrease of feeding ratio, the internal porosity of grinding wheel increases, and grinding experiments show that pore-forming agent can improve the surface quality of silicon wafer.When the volume fraction of pore-forming agent is 10% and the volume density feeding ratio is controlled at 75%, the resin-bonded silicon wafer thinning wheel has better comprehensive grinding performance. The fluctuation range of Ra, Rz and Ry values of the surface roughness of the silicon wafer ground by this wheel is small. Compared with the silicon wafer ground by the grinding wheel under other conditions, the surface consistent of the silicon wafer is good. 
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