金刚石砂轮磨削贴膜硅片崩边的研究

用树脂结合剂金刚石砂轮将贴膜厚度为80 μm和160 μm的单晶硅片减薄到400 μm,通过测量硅片边缘的崩边尺寸评价贴膜对硅片加工质量的影响。试验结果表明:硅片贴膜能有效降低硅片碎片率;当硅片未贴膜时,硅片的平均崩边尺寸为3.08 μm,当硅片贴膜厚度为80 μm和160 μm时,硅片的平均崩边尺寸为4.61 μm和3.60 μm;即硅片贴膜磨削对硅片崩边有恶化作用,但该影响较小,用厚膜时恶化程度可控制在20%以内。且用23 μm金刚石砂轮减薄磨削贴膜硅片时,硅片<110>晶向和<100>晶向的崩边尺寸无明显差异。 

Research on edge chipping of silicon wafers with taping after diamond grinding

Resin-bonded diamond grinding wheel was used to reduce the thickness of single crystal silicon wafer with film thickness of 80 μm and 160 μm to 400 μm. The effect of film thickness on the quality of silicon wafer was evaluated by measuring the edge collapse size of silicon wafer. The experimental results show that the silicon taping can effectively reduce the fragmentation rate of silicon wafer. When the silicon wafer is not taped, the average edge collapse size of the silicon wafer is 3.08 μm. When the taping thickness of the silicon wafer is 80 μm and 160 μm,the average edge collapse size of the silicon wafer is 4.61 μm and 3.60 μm, which means that silicon taping has a deteriorating effect on the edge collapse of silicon wafer, while the effect is small. The deterioration degree can be controlled within 20% when thick film is used. When the film-coated silicon wafer is thinned and ground with a 23 μm diamond grinding wheel, there is no significant difference in the edge collapse sizes of <110> crystal direction and <100> crystal direction of silicon wafer.