Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy |
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| Authors: | Kunihiro Suzuki Yuji Kataoka Susumu Nagayama Charles W. Magee Temel H. Buyuklimanli Tsutomu Nagayama |
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| Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
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| Abstract: | We evaluated the redistribution profiles of ion-implanted impurities during solid-phase epitaxy using Rutherford backscattering spectrometry (RBS). RBS data revealed that the As concentration changes only near the moving amorphous/crystal interface. We derived an analytical model for the redistribution profiles using a segregation coefficient m between amorphous and crystalline Si, introduced a parameter of reaction length l that is the distance where impurities were exchanged, and obtained good agreement with experimental data with an m value of 3 and an l value of 1 nm for As. Furthermore, we applied our model to P and B redistribution profiles and obtained good agreement with corresponding m value of 4 and l value of 1 nm for P and m value of 0.3 and l value of 1 nm for B |
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