A high-frequency fifth order switched-current bilinear ellipticlowpass filter

Design considerations for and measured results of a prototype high-frequency fifth order switched-current bilinear elliptic lowpass filter are presented in this paper. The prototype filter was implemented on a standard 1.2 μm double-metal single-polysilicon CMOS process and occupied a total die area of 1.5 mm². When clocked at 2 MHz, the filter achieved a passband edge of 350 kHz, a stopband edge of 420 kHz, a passband ripple of 0.6 dB and a minimum stopband attenuation of 26 dB. With a single 5 V power supply the filter consumed 28 mW