| 一种考虑自热效应的AlGaN/GaN HEMT大信号模型 |
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| 引用本文： | 王林,王燕.一种考虑自热效应的AlGaN/GaN HEMT大信号模型[J].固体电子学研究与进展,2011,31(1):13-15,75. |
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| 作者姓名： | 王林 王燕 |
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| 作者单位： | 清华大学微电子学研究所,北京,100084 |
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| 基金项目： | 国家重点基础研究专项基金 |
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| 摘 要： | 当AlGaN/GaN HEMT输出高功率密度时,器件沟道温度的升高将引起电流的下降(自热效应).提出了一种针对AlGaN/GaN HEMT改进的大信号等效电路模型,考虑了HEMT自热效应,建立了一种改进的大信号I-V特性模型,仿真结果与测试结果符合较好,提高了大信号模型的精度.
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| 关 键 词： | 铝镓氮/氮化镓异质结场效应晶体管 自热效应 等效电路 大信号模型 |
An Improved Large-signal Model of AlGaN/GaN HEMT Considering Self-heating Effect |
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| WANG Lin,WANG Yan.An Improved Large-signal Model of AlGaN/GaN HEMT Considering Self-heating Effect[J].Research & Progress of Solid State Electronics,2011,31(1):13-15,75. |
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| Authors: | WANG Lin WANG Yan |
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| Abstract: | The high power operation of AlGaN/GaN HEMTs may result in high junction temperature in the conduction channel and output current decreasing,which is commonly known as the self-heating effect.Based on an improved AlGaN/GaN HEMT large-signal model equivalent circuit,a new large-signal I-V model considering the self-heating effect has been presented in this paper.A good agreement between the model and experimental results is obtained. |
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| Keywords: | AlGaN/GaN HEMT self-heating effect equivalent circuit large-signal model |
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