| 异质栅单Halo沟道SOI中隐埋层对器件特性的影响 |
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| 引用本文： | 黄玮,钟传杰.异质栅单Halo沟道SOI中隐埋层对器件特性的影响[J].固体电子学研究与进展,2011,31(1):48-52. |
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| 作者姓名： | 黄玮 钟传杰 |
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| 作者单位： | 江南大学信息工程学院,江苏,无锡,214122 |
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| 摘 要： | 研究异质栅单Halo沟道SOI MOS器件的隐埋层中二维效应对器件特性,如电势分布、阈值电压等的影响,仿真结果表明,隐埋层中的二维效应会引起更明显的SCE及DIBL效应.在考虑隐埋层二维效应的基础上,提出了一个新的二维阈值电压模型,能较好地吻合二维器件数值模拟软件Medici的仿真结果.
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| 关 键 词： | 异质栅 单Halo 绝缘体上的硅 二维效应 阈值电压 |
Impact of Buried Oxide Layer on Characteristics of Dual Material Gate SOI MOSFETs with Single Halo |
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| HUANG Wei,ZHONG Chuanjie.Impact of Buried Oxide Layer on Characteristics of Dual Material Gate SOI MOSFETs with Single Halo[J].Research & Progress of Solid State Electronics,2011,31(1):48-52. |
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| Authors: | HUANG Wei ZHONG Chuanjie |
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| Abstract: | In this paper,the study of the impact of the two-dimensional effects in a buried oxide layer on device characteristics is presented,such as potential distribution,and threshold voltage.The simulation results indicate that the short-channel effect and drain-induced barrier lowering effect become more serious due to the two-dimensional effect.With taking the two-dimensional effect in a buried oxide layer into account,a novel two-dimensional analytical model is proposed,and the calculated results are in good agreement with those from two-dimensional device simulator of Medici. |
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| Keywords: | dual material gate single halo SOI two-dimension effect threshold voltage |
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