UHF频段高功率SiC SIT

采用导通SiC衬底上的SiC多层外延材料,成功制作出了国内首个SiC SIT(静电感应晶体管).该器件研制中,采用了自对准工艺、高能离子注入及高温退火工艺、密集栅深凹槽干法刻蚀工艺、PECVD SiO:和SizNy介质钝化工艺,有效抑制了漏电并提高了器件击穿电压,器件功率输出能力由此得到提升.最终28 cm栅宽SiC ...

High Output Power SiC SIT for UHF Band Microwave Application

SiC SIT devices with 550 W output power have been fabricated on SiC epitaxial wafer for UHF band applications.The developed devices adopted a p-type Al ion implanted gate with a recessed structure and their power performance was improved by decreased leakage current and enhanced break-down voltage.The self-aligned,dense gate recess etching,high temperature anneals and PECVD passivation process technologies were adopted.At 500 MHz and 90 V drain to source voltage,a 28 cm gate periphery SiC SIT exhibited output power of 550 W with gain of 11.3 dB under pulsed RF operation.