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关于半导体器件热特性表征和控制技术的研究
引用本文:金毓铨,陶有迁,王因生,韩钧,施传贵.关于半导体器件热特性表征和控制技术的研究[J].固体电子学研究与进展,2011,31(1):53-55.
作者姓名:金毓铨  陶有迁  王因生  韩钧  施传贵
作者单位:南京电子器件研究所,南京,210016
摘    要:根据对器件散热特性的分析,提出用特定脉宽的瞬态热阻抗表征器件的稳态散热特性.测量了特定器件热阻与温度的依赖关系,建议在实际工作中注意器件热阻并不为常数的客观事实.提出应力试验前后测量器件热阻可有效控制器件的某些制造缺陷.

关 键 词:半导体器件  热特性  稳态热阻  瞬态热阻抗

Study on Characterization and Control of the Thermal Performance of Semiconductor Devices
JIN Yuquan,TAO Youqian,WANG Yinsheng,HAN Jun,SHI Chuangui.Study on Characterization and Control of the Thermal Performance of Semiconductor Devices[J].Research & Progress of Solid State Electronics,2011,31(1):53-55.
Authors:JIN Yuquan  TAO Youqian  WANG Yinsheng  HAN Jun  SHI Chuangui
Abstract:Based on analyzing the heat conduction characteristic of the devices,this paper suggests that the steady-state thermal performance of the semiconductor devices can be characterized by using transient thermal impedance under a specific pulse width.The temperature dependent performance of the thermal resistance of some microwave devices is measured.It is noted that the thermal resistance is not a constant when evaluating a device.The test results show that some manufactured defect of devices can be discoverd and controlled by measure the thermal resistance of devices before and after the stress tests.
Keywords:semiconductor device  thermal performance  steady-state thermal resistance  transient thermal impedance
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