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大功率MOSFET管开关过渡过程的分析与仿真
引用本文:朱武,陶洁晶,王巨灏,涂祥存,管水秀.大功率MOSFET管开关过渡过程的分析与仿真[J].上海电力学院学报,2010,26(6):515-519.
作者姓名:朱武  陶洁晶  王巨灏  涂祥存  管水秀
作者单位:1. 上海电力学院,计算机与信息工程学院,上海,200090
2. 苏州供电公司,江苏,苏州,215004
基金项目:上海市教委科研创新重点项目(11ZZ173)
摘    要:功率MOSFET是理想的开关,在超声波电发生器、高频开关电源、高频焊机等方面使用广泛,但因驱动线路参数设计欠优而使MOSFET管烧坏的情况时有发生.根据器件和电路参数,推导出开关期间的栅极电压、漏极电流和漏极电压的封闭解.通过比较仿真结果,为功率MOSFET的驱动电路设计提供理论指导.

关 键 词:解析分析  电路模型  过渡过程
收稿时间:2010/7/12 0:00:00

Analysis and Emulation of Power MOSFET Switching Transient Course
ZHU Wu,TAO Jie-jing,WANG Ju-hao,TU Xiang-cun and GUAN Shui-xiu.Analysis and Emulation of Power MOSFET Switching Transient Course[J].Journal of Shanghai University of Electric Power,2010,26(6):515-519.
Authors:ZHU Wu  TAO Jie-jing  WANG Ju-hao  TU Xiang-cun and GUAN Shui-xiu
Affiliation:ZHU Wu1,TAO Jie-jing2,WANG Ju-hao2,TU Xiang-cun1,GUAN Shui-xiu1(1.School of Computer and Information Engineering,Shanghai University of Electric Power,Shanghai 200090,China,2.Suzhou Electric Power Company,Suzhou 215004,China)
Abstract:The power MOSFET is almost an ideal switch,which is used widely in the ultrasonic electric generator,high frequency switching mode power supply and high frequency welding power supply.The phenomenon that MOSFET is devastated occurs frequently because the design of the drive circuit is not optimized.Closed-form solutions for the gate voltage,drain current,and drain voltage during the switching interval,in terms of each of the relevant device and circuit parameters,are derived.By comparison of the results of ...
Keywords:analysis  circuit mode  transient course  
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