| 掺氮ZnSe外延层的光致发光研究 |
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| 引用本文： | 朱作明,王善中.掺氮ZnSe外延层的光致发光研究[J].红外与毫米波学报,1999,18(1):13-18. |
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| 作者姓名： | 朱作明 王善中 |
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| 作者单位： | 1. 中国科学院半导体研究所,半导体超晶格国家重点实验室,北京,100083
2. 中国科学院上海技术物理研究所,半导体薄膜材料研究中心,红外物理国家重点实验室,上海,200083 |
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| 摘 要： | 报导了掺氮ＺｎＳｅ外延层的光致发光，研究了与氮受主有关的发光峰随温度和激发强度的变化关系．１０Ｋ下施主－受主对发光峰随激发强度的增加向高能方向移动，且峰强呈现饱和趋势．在１０～３００Ｋ温度范围光致发光谱表明，随着温度增加，由于激子在受主束缚激子态和施主束缚激子态之间转移，施主束缚激子发光峰强度相对受主束缚激子发光峰强度增加
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| 关 键 词： | 光致发光 束缚激子 |
PHOTOLUMINESCENCE PROPERTIES OF NITROGEN DOPED ZnSe EPILAYERS |
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| ZHU Zuo,Ming,LIU Nan,Zhu,LI Guo,Hua,HAN He,Xiang,WANG Zhao,Ping.PHOTOLUMINESCENCE PROPERTIES OF NITROGEN DOPED ZnSe EPILAYERS[J].Journal of Infrared and Millimeter Waves,1999,18(1):13-18. |
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| Authors: | ZHU Zuo Ming LIU Nan Zhu LI Guo Hua HAN He Xiang WANG Zhao Ping |
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| Abstract: | The photoluminescence(PL) properties of nitrogen doped ZnSe epilayers grown on semi insulating GaAs(100) substrates by MBE using a rf plasma source for N doping were investigated. The PL peak which can be related to N acceptor was observed in the PL spectra of ZnSe:N smaples. At 10K, as the excitation power density increases, the energy of donor acceptor pair(DAP) emission shows a blue shift and its intensity tends to saturate. As the temperature increases over a range from 10K to 300K, the relative PL intensity of donor bound exciton to that of the acceptor bound exciton increases due to the transfer between two bound excitons. |
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| Keywords: | ZnSe:N |
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