| MBE生长的HgCdTe材料B离子注入特性研究 |
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| 引用本文： | 黄根生 姬荣斌. MBE生长的HgCdTe材料B离子注入特性研究[J]. 红外与毫米波学报, 1999, 18(1): 19-22 |
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| 作者姓名： | 黄根生 姬荣斌 |
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| 作者单位： | 中国科学院上海技术物理研究所,红外物理国家重点实验室,半导体薄膜材料研究中心,上海,200083 |
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| 摘 要： | 用剥层霍耳测量分析了ＭＢＥ生长ＨｇＣｄＴｅ薄膜的Ｂ离子注入的电学特性，测量了薄膜材料的载流子浓度和迁移率分布．当剥层腐蚀到结区，结区增透引起红外透射光谱的峰值提高．
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| 关 键 词： | 剥层霍耳测量 红外透射光谱 |
A STUDY OF ELECTRICAL CHARACTERISTICS FOR BORON IMPLANTATION OF MBE GROWN HgCdTe |
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| HUANG Gen Sheng JI Rong Bin FANG Wei Zheng YANG Jian Rong CHEN Xin Qiang HE Li. A STUDY OF ELECTRICAL CHARACTERISTICS FOR BORON IMPLANTATION OF MBE GROWN HgCdTe[J]. Journal of Infrared and Millimeter Waves, 1999, 18(1): 19-22 |
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| Authors: | HUANG Gen Sheng JI Rong Bin FANG Wei Zheng YANG Jian Rong CHEN Xin Qiang HE Li |
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| Abstract: | The electrical property of boron implantation of MBE grown HgCdTe and the profile of carrier concentration and mobility measured by sheet Hall were presented. After etching the epilayer to p n junction position, the transmittance of this position was raised, which was ascribed to the high transmission of junction region. |
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| Keywords: | MBE HgCdTe |
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