Crack formation in metallized single crystal silicon substrates |
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Authors: | T O’brien Y Li S Danyluk |
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Affiliation: | (1) Department of Civil Engineering, Mechanics, and Metallurgy, University of Illinois at Chicago, P.O. Box 4348 MC-246, 60680 Chicago, Illinois |
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Abstract: | Ball bonding of metallized silicon substrates has been simulated by microindentation, with a hemispherical diamond indentor,
of (100) silicon wafers that contained aluminum film layers. The indentation loads varied up to 35N and the thickest aluminum film, composed of four layers, was 100 × 10-6 m. The radial cracks in the silicon, beneath the aluminum film, were measured as a function of indentation load and aluminum
film thickness, and compared to that of unmetallized silicon. The crack lengths have been used to determine the fracture toughness,K
c = 24.4 ± 4.9 MPam0.5, which is twice the value obtained by Vickers indentation experiments. A model describing the relationship between the film
thickness versus the radial crack length is presented. |
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Keywords: | Si substrate crack formation Vickers indentation |
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