In:Ce:Mn:LiNbO3晶体的全息存储性能

原料采用固液同成分配比,在LiNbO3（LN）晶体中掺入质量分数为0．1％CeO2和0．015％MnCO3，摩尔分数分别为0，1％，2％和3％的In，用提拉法生长In：Ce ：Mn ：LN晶体。测试了In ：Ce ：Mn ：LN晶体的红外透射光谱和抗光损伤能力。结果表明：3％In ：Ce ：Mn ：LN晶体的OH振动吸收峰紫移到3508cm^-1位置；其抗光损伤能力比Ce ：Mn ：LiNgO3晶体提高2个数量级以上。利用二波耦合光路测试晶体的写入时间（τw）、擦除时间（τc）和衍射效率（η），计算晶体的动态范围（M^#），研究In^3＋掺量对Ce ：Mn ：LN晶体光折变性能的影响。结果表明：In ：Ce ：Mn ：LN晶体是比Ce ：Mn ：LN晶体综合性能更好的全息存储材料。

HOLOGRAPHIC STORAGE PROPERTIES OF In: Ce: Mn: LiNbO3 CRYSTALS

In:Ce:Mn:LiNbO3 (LN) crystals with the addition of 0,1%,2%,or 3% In (in mole) were grown by the Czochralski method from congruent melting, with the CeO2 and MnCO3 contents of 0.1 % and 0. 015 % in mass respectively. The infrared spectra and the photo-damage resistance of the In: Ce: Mn: LN crystal were tested. The results show that the OH-vibration absorption peak of the 3% In: Ce: Mn: LN crystal purple shifted to the 3 508 cm-1 position; its photo-damage resistance is over two orders of magnitude higher than that of the Ce: Mn: LN crystal. The diffraction efficiency (η), writing time(τw) and erasure time(τe) were measured with a two-wave coupling experiment. The dynamic range(M＃) was calculated for the first time. The effect of different In3+ doping levels on the photorefractive properties of In:Ce:Mn:LiNbO3 crystals were investigated. The results show that the overall properties of the In:Ce:Mn:LN crystal make it a better holographic storage material than the Ce:Mn:LN crystal.