| Growth and Optical Properties of ZnO Films and Quantum Wells |
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| 引用本文： | Zhang Baoping,Kang Junyong,Yu Jinzhong,Wang Qiming,Segawa Yusaburo. Growth and Optical Properties of ZnO Films and Quantum Wells[J]. 半导体学报, 2006, 27(4): 613-622 |
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| 作者姓名： | Zhang Baoping Kang Junyong Yu Jinzhong Wang Qiming Segawa Yusaburo |
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| 作者单位： | 厦门大学物理系，厦门 361005;独立行政法人 理化学研究所，仙台 980-0845，日本;厦门大学物理系，厦门 361005;厦门大学物理系，厦门 361005;中国科学院半导体研究所，北京 100083;厦门大学物理系，厦门 361005;中国科学院半导体研究所，北京 100083;独立行政法人 理化学研究所，仙台 980-0845，日本 |
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| 基金项目： | Acknowledgement Part of the work was done in the Photodynamics Research Center,the Frontier Research System of RIKEN. The authors would like to show their sincere acknowledgement to Dr. N. T. Binh, Mr. K. Wakatsuki, Prof. C. Y. Liu and Prof. N. Usami for their fruitful support. |
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| 摘 要： | 研究了用MOCVD法在蓝宝石(Al2O3)(0001)和(1120)衬底上制备ZnO薄膜时的生长特性.详细研究了采用Al2O3(0001)衬底时生长温度与压力的影响.由于存在比较大的晶格失配,一般容易得到ZnO纳米结晶,不容易获得既平坦且质量又好的ZnO薄膜.生长温度对薄膜-衬底界面的生长模式有很大的影响;而生长压力对ZnO纳米结晶的形状有决定性作用.通过适当控制生长温度及压力,可以得到ZnO薄膜或不同形状的纳米结构.当采用Al2O3(1120)衬底时,由于晶格失配较小,能保持平坦层状生长,临界膜厚远远大于采用Al2O3(0001)衬底的结果.在Al2O3(1120)衬底上制作了ZnO/MgZnO量子阱并研究了其光学特性.观察到了量子化能级间以及在载流子间的跃迁引起的发光.由压电效应引起的内建电场约为3×105V/cm.同时发现采用低温低压生长可以增大ZnO中受主杂质浓度,有利于获得p型ZnO.
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| 关 键 词： | 氧化锌 薄膜 量子阱 MOCVD 生长温度 掺杂 ZnO thin films quantum well MOCVD growth temperature doping 薄膜 量子阱 生长 光学特性 Quantum Wells ZnO Films Optical Properties the growth low temperatures incorporation acceptor impurities piezoelectric effect electric field layer surfaces quantum wells critical thickness good |
| 文章编号： | 0253-4177(2006)04-0613-10 |
| 收稿时间： | 2005-12-28 |
| 修稿时间： | 2006-01-19 |
Growth and Optical Properties of ZnO Films and Quantum Wells |
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| Zhang Baoping,Kang Junyong,Yu Jinzhong,Wang Qiming and Segawa Yusaburo. Growth and Optical Properties of ZnO Films and Quantum Wells[J]. Chinese Journal of Semiconductors, 2006, 27(4): 613-622 |
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| Authors: | Zhang Baoping Kang Junyong Yu Jinzhong Wang Qiming Segawa Yusaburo |
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| Affiliation: | Department of Physics,Xiamen University,Xiamen 361005,China;RIKEN,Sendai 980-0845,Japan;Department of Physics,Xiamen University,Xiamen 361005,China;Department of Physics,Xiamen University,Xiamen 361005,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Department of Physics,Xiamen University,Xiamen 361005,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;RIKEN,Sendai 980-0845,Japan |
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| Abstract: | The growth characteristics during metalorganic chemical vapor deposition and optical properties of ZnO films on sapphire (Al2O3) (0001) and (1120) substrates are studied.For the former,the effects of two important growth parameters,i.e.temperature and pressure,are investigated in detail.Due to the large lattice mismatch between the film and the substrate,ZnO nanocrystals are usually obtained.The growth behavior at the film-substrate interface is found to be strongly dependent on the growth temperature,while the growth pressure determines the shape of the nanostructures as they grow.It is difficult to obtain ZnO films that have good quality and a smooth surface simultaneously.Due to the smaller lattice mismatch,the critical thickness of ZnO on the Al2O3 (1120) surface is found to be much larger than that on the Al2O3 (0001) surface.ZnO/MgZnO quantum wells with graded well thicknesses are grown on the Al2O3 (1120) surfaces,and their optical properties are studied.The built-in electric field in the well layer,generated by the piezoelectric effect,is estimated to be 3E5V/cm.It is found that growth at low temperatures and low pressures may facilitate the incorporation of acceptor impurities in ZnO. |
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| Keywords: | ZnO thin films quantum well MOCVD growth temperature doping |
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