Formation of bismuth oxide nanowires by simultaneous templating and electrochemical adhesion of DNA on Si/SiO2 |
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Authors: | Michael G. HaleRoss Little,Mohamed Ali SalemJoseph H. Hedley,Benjamin R. HorrocksLidija &Scaron iller |
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Affiliation: | a School of Chemistry, Newcastle University, Newcastle upon Tyne, NE1 7RU, UKb School of Chemical Engineering and Advanced Materials, Newcastle University, Newcastle upon Tyne, NE1 7RU, UK |
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Abstract: | Deoxyribonucleic acid (DNA)-templated growth of Bi/Bi2O3 nanowires attached to the Si surface was obtained by electrochemical reduction of Bi(III) at an n-type Si electrode in aqueous Bi(NO3)3/HNO3 at pH 2.5 with calf thymus DNA. The nanowires had a mean diameter of 5 nm and a range of lengths from 1.4 μm to 6.1 μm. The composition and structure of the wires were determined by atomic force microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy and X-ray photoemission spectroscopy. The dominant component of the material is Bi2O3 owing to the rapid re-oxidation of nanoscale Bi in the presence of air and water. Our method has the potential to construct complex architectures of Bi/Bi2O3 nanostrucures on high quality Si substrates. |
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Keywords: | DNA Bismuth Templating Photoemission Nanowires |
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