Molecular-beam growth of homoepitaxial InSb photovoltaic detectors |
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| Authors: | Ashley T Dean AB Elliott CT McConville CF Whitehouse CR |
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| Affiliation: | R. Signals & Radar Establ., Great Malvern; |
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| Abstract: | Molecular-beam epitaxy has been used for the first time to fabricate np junctions in InSb grown onto p-type InSb (100) substrates. Diodes formed by the epitaxial growth of a silicon-doped layer on undoped homoepitaxial material exhibited a bulk generation-recombination-limited R0A value of 105 Ω cm2 and Dλpk * of 3×1012 cm Hz1/2 W-1 at liquid nitrogen temperature |
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