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太阳能电池单晶Si表面织构化的工艺改进
引用本文:闫宝华,檀柏梅,刘玉岭,孙增标,申晓宁,张研. 太阳能电池单晶Si表面织构化的工艺改进[J]. 微纳电子技术, 2009, 46(11). DOI: 10.3969/j.issn.1671-4776.2009.11.011
作者姓名:闫宝华  檀柏梅  刘玉岭  孙增标  申晓宁  张研
作者单位:河北工业大学,微电子研究所,天津,300130
摘    要:通过实验分析Na2SiO3和Na3PO4混合溶液对〈100〉晶向的单晶Si片的各向异性腐蚀过程,探讨了Na2SiO3溶液和Na2SiO3、Na3PO4混合溶液对表面织构化的影响机制,并且对制绒前Si片的电化学清洗过程和混合溶液的反应温度和反应时间等参数的变化对金字塔绒面微观形貌的影响做了分析。最终通过大量实验得到,用质量分数为4%的Na2SiO3和2%的Na3PO4混合溶液在78℃腐蚀60min,单晶Si片表面可获得最佳反射率为11.98%的减反射绒面。单晶Si片表面的反射率优于单独使用Na2SiO3溶液腐蚀,更重要的是制得了很好的均匀性表面。

关 键 词:单晶硅  太阳电池  电化学清洗  绒面  各向异性腐蚀  转换效率

Process Improvement of Surface Texturization of Monocrystalline Silicon for Solar Cells
Yan Baohua,Tan Baimei,Liu Yuling,Sun Zengbiao,Shen Xiaoning,Zhang Yan. Process Improvement of Surface Texturization of Monocrystalline Silicon for Solar Cells[J]. Micronanoelectronic Technology, 2009, 46(11). DOI: 10.3969/j.issn.1671-4776.2009.11.011
Authors:Yan Baohua  Tan Baimei  Liu Yuling  Sun Zengbiao  Shen Xiaoning  Zhang Yan
Abstract:Anisotropic etching process of 〈100〉 oriented crystalline silicon in the solution of sodium silicate and sodium phosphate was analyzed by the experiment.The impact mechanisms of the solution of sodium silicate and the mixed solution of sodium silicate and sodium phosphate on the texturization of the surface were investigated,and the impactions of the electrochemical cleaning process before silicon texturing as well as the changed parameters of reaction temperature and times in the mixed solution on the micro-morphology of the pyramid type were analyzed.A wafer with a suede structure and a mean reflectivity of about 11.98% was obtained after corrosion with the mixed solution of 4% sodium silicate and 2% sodium phosphate at 78 ℃ for 60 min.The reflectivity on the surface of wafers corroded by using the mixed solution of sodium silicate and sodium phosphate are better than those corroded by using sodium silicate only.Furthermore,a more homogeneous antireflection texture was obtained.
Keywords:monocrystalline silicon  solar cell  electrochemical cleaning  texturization  anisotropic etching  conversion efficiency
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