| 采用深槽刻蚀和外延生长技术的700V超结MOSFETs |
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| 引用本文： | 李泽宏,任敏,张波,马俊,胡涛,张帅,王非,陈俭. 采用深槽刻蚀和外延生长技术的700V超结MOSFETs[J]. 半导体学报, 2010, 31(8): 084002-5 |
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| 作者姓名： | 李泽宏 任敏 张波 马俊 胡涛 张帅 王非 陈俭 |
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| 摘 要： | 超结理论的提出是功率器件领域发展的重要里程碑。基于HHNEC的工艺平台，采用深槽刻蚀和外延生长技术，得到了击穿电压大于700V的超结功率MOSFETs，实验值和仿真值吻合好。结果表明，所研制的超结功率MOSFETs，动态特性，特别是二极管的特性，优于国外同类型产品。该种结构的实验成功，打破了国内在该领域实用化研究的空白。
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| 关 键 词： | 功率MOSFET 外延生长 深沟槽 上海华虹NEC电子有限公司 制备 蚀刻 击穿电压 二极管 |
| 收稿时间： | 2010-03-23 |
Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth |
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| Li Zehong,Ren Min,Zhang Bo,Ma Jun,Hu Tao,Zhang Shuai,Wang Fei and Chen Jian. Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth[J]. Chinese Journal of Semiconductors, 2010, 31(8): 084002-5 |
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| Authors: | Li Zehong Ren Min Zhang Bo Ma Jun Hu Tao Zhang Shuai Wang Fei Chen Jian |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;Shanghai Hua Hong NEC Electronics Company Limited, Shanghai 2012064, China;Shanghai Hua Hong NEC Electronics Company Limited, Shanghai 2012064, China;Shanghai Hua Hong NEC Electronics Company Limited, Shanghai 2012064, China |
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| Abstract: | Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth, based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited. The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation. The dynamic characteristics, especially reverse diode characteristics, are equivalent or even superior to foreign counterparts. oindent |
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| Keywords: | superjunction deep trench etching epitaxial growth power MOSFET oindent |
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