Growth and Characterization of Unintentionally Doped
GaSb Nanowires |
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| Authors: | Robert A Burke Xiaojun Weng Meng-Wei Kuo Young-Wook Song Anne M Itsuno Theresa S Mayer Steven M Durbin Roger J Reeves Joan M Redwing |
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| Affiliation: | (1) Harvard University, Cambridge, MA 02138, USA;(2) Ben Gurion University, Beer Sheva, Israel;(3) Present address: University of Houston, Houston, TX 77004, USA |
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| Abstract: | GaSb nanowires were synthesized on c-plane sapphire substrates by gold-mediated vapor–liquid–solid (VLS) growth using a metalorganic chemical vapor deposition
process. A narrow process window for GaSb nanowire growth was identified. Chemical analysis revealed variations in the catalyst
composition which were explained in terms of the Au-Ga-Sb ternary phase diagram and suggest that the VLS growth mechanism
was responsible for the nanowire growth. The nominally undoped GaSb nanowires were determined to be p-type with resistivity on the order of 0.23 Ω cm. The photoluminescence was found to be highly dependent on the V/III ratio,
with an optimal ratio of unity. |
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