| Abstract: | A new, simple heterojunction bipolar transistor (HBT) large‐signal model for use in CAD is proposed and experimentally evaluated. The important development in this model is that the main model parameters are derived directly from the measurements taken during typical operating conditions. The model was evaluated with extensive measurements at different temperatures by DC, S, and power‐spectrum measurements. Good correspondence was obtained between the measurement and experimental results. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13, 518–533, 2003. |
