| Abstract: | An accurate model is presented for micromachined on‐chip spiral inductors, in which the high‐frequency current crowding effects in metal traces are considered by simplified partial element equivalent circuits, and the substrate parasitics are extracted by the parametric modeling method. The model has been confirmed by both measurements and the results from the 3‐dimensional finite element method. This equivalent circuit model enables the prediction and optimization of high‐Q micromachined spiral inductors in gigahertz frequencies. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 229–238, 2003. |
