Dielectric properties of thin solid films formed on silicon

We report on the measurement of the frequency-dependent complex permittivity, ()=()-i(), over the frequency range, 30 MHz to 6 GHz, of silicon wafers and of thin dielectric films formed on silicon. Measurements, as a function of temperature and time treatments, were obtained by means of an HP Network Analyzer and dielectric probe and the resulting ()and()plots for the silicon wafers are shown to have a Debye-type [1] profile, thereby indicating that the associated polarization mechanism is of the orientational variety.