| 退火温度对Al掺杂ZnO薄膜结构和性能的影响 |
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| 引用本文： | 李雪勇,崔丽玲,严钦云.退火温度对Al掺杂ZnO薄膜结构和性能的影响[J].湖南工业大学学报,2011,25(5):22-25. |
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| 作者姓名： | 李雪勇 崔丽玲 严钦云 |
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| 作者单位： | 湖南工业大学理学院,湖南株洲,412007 |
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| 基金项目： | 湖南省教育厅科研基金资助项目（09C321） |
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| 摘 要： | 采用直流磁控溅射技术,在玻璃衬底上制备了ZnO:Al(ZAO)薄膜样品。其他参数不变,在不同的温度下对样品进行了退火处理,研究了薄膜的结构性质、电学和光学性质随退火温度的变化关系。实验结果表明:在退火温度为200℃时,ZAO薄膜具有较优的光电性能,其电阻率为9.62×10-5.cm,可见光区平均透射率为89.2%。
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| 关 键 词： | ZAO薄膜 退火温度 电学性能 光学性能 |
| 收稿时间： | 2011/6/12 0:00:00 |
Effects of Annealing Temperature on the Structure and Properties of
Al Doped ZnO Thin Films |
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| Li Xueyong,Cui Liling and Yan Qinyun.Effects of Annealing Temperature on the Structure and Properties of
Al Doped ZnO Thin Films[J].Journal of Hnnnan University of Technology,2011,25(5):22-25. |
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| Authors: | Li Xueyong Cui Liling and Yan Qinyun |
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| Affiliation: | Li Xueyong,Cui Liling,Yan Qinyun (School of Sciences,Hunan University of Technology,Zhuzhou Hunan 412007,China) |
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| Abstract: | The ZnO：Al（ZAO） films were deposited on glass substrates by using a DC reactive magnetron sputtering system.With the other parameters unchanged,the structural,electrical and optical properties of ZAO films were studied at the different annealing temperatures.The experimental results show that at the annealing temperature of 200 ℃ the ZAO thin film has better optical properties,the resistivity is 9.62×10-5 Ω·cm and the transmissivity in visible region is 89.2%. |
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| Keywords: | ZAO films annealing temperature electrical properties optical properties |
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