| 冷等离子体对硅粉薄层纯化的动力学分析 |
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| 引用本文： | 冯信华,何笑明,陈丽,尹盛,李忠,天敬义. 冷等离子体对硅粉薄层纯化的动力学分析[J]. 微细加工技术, 1998, 0(1) |
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| 作者姓名： | 冯信华 何笑明 陈丽 尹盛 李忠 天敬义 |
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| 作者单位： | 华中理工大学能源学院电气系 |
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| 摘 要： | 利用提高硅粉薄层温度的方法，使冷等离子体对硅提纯达４Ｎ（９９．９９％）。本文用反应动力学的方法分析提纯机理，建立必要的方程以探讨影响提纯的因素。
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| 关 键 词： | 冷等离子体，硅的纯化，化学反应动力学 |
KINETICS ANALYSIS ON PURIFICATION OF SILICON POWDER LAYER BY COLD PLASMA |
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| Feng Xinhua,He Xiaoming,Chen Li,Yin Shen, Li Zhong,Wang Jingyi. KINETICS ANALYSIS ON PURIFICATION OF SILICON POWDER LAYER BY COLD PLASMA[J]. Microfabrication Technology, 1998, 0(1) |
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| Authors: | Feng Xinhua He Xiaoming Chen Li Yin Shen Li Zhong Wang Jingyi |
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| Abstract: | Rising the temperature of silicon powder layer,the cold plasma;can purify silicion up to more than 4N (99.99%). The purifing mechanism is analyzed by the reaction kinetic method and the necessary equations have been set to discuss the effects on purification of silicon powder layer. |
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| Keywords: | Cold plasma purification of Si Chemstry reaction kinetics |
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