Effect of the PbOx thickness on the microstructure and electrical properties of PLT thin films prepared by RF magnetron sputtering

The (Pb_0.90La_0.10)Ti_0.975O₃ (PLT) thin films with different thicknesses of PbO_x buffer layers were deposited on the Pt(111)/Ti/SiO₂/Si(100) substrates by RF magnetron sputtering technique. The PbO_x buffer layer leads to the (100) orientation of the PLT thin films. Effects of the PbO_x thickness on the microstructure and electrical properties of the PLT thin films were investigated. The experimental results show that the PbO_x thickness plays an important role on the orientation, phase purity, domain structure, and electrical properties of the PLT thin films. The PLT thin films with proper PbO_x thickness possess highly (100) orientation, high phase purity, strong intensity of out of plane polarization, and good electrical properties. It is concluded that the PbO_x thickness between PLT thin films and Pt coated Si substrate is very critical to obtain good electrical properties.