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Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment |
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| Authors: | Po-Chun YangTing-Chang Chang Shih-Ching ChenHsuan-Hsiang Su Jin LuHui-Chun Huang Der-Shin GanNew-Jin Ho |
| Affiliation: | a Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC b Center for Nanoscience & Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC c Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC d Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC |
| Abstract: | In this study, high-pressure oxygen (O2 and O2 + UV light) technologies were employed to effectively improve the properties of low-temperature-deposited metal oxide dielectric films and interfacial layer. In this work, 13 nm HfO2 thin films were deposited by sputtering method at room temperature. Then, the oxygen treatments with a high-pressure of 1500 psi at 150 °C were performed to replace the conventional high temperature annealing. According to the XPS analyses, integration area of the absorption peaks of O-Hf and O-Hf-Si bonding energies apparently raise and the quantity of oxygen in deposited thin films also increases from XPS measurement. In addition, the leakage current density of standard HfO2 film after O2 and O2 + UV light treatments can be improved from 3.12 × 10−6 A/cm2 to 6.27 × 10−7 and 1.3 × 10−8 A/cm2 at |Vg| = 3 V. The proposed low-temperature and high pressure O2 or O2 + UV light treatment for improving high-k dielectric films is applicable for the future flexible electronics. |
| Keywords: | High-k dielectric HfO2 O3 passivation X-ray photo-emission spectroscopy (XPS) |
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