| 化学气相沉积传质现象的研究与反应器设计、工艺参数的优化 |
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| 引用本文： | 赵康,鄢君辉,刘正堂,郑修麟. 化学气相沉积传质现象的研究与反应器设计、工艺参数的优化[J]. 材料导报, 2000, 14(3): 13-15 |
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| 作者姓名： | 赵康 鄢君辉 刘正堂 郑修麟 |
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| 作者单位： | 1. 西安理工大材料学院,西安,710048
2. 西北工业大学材料科学与工程学院,西安,710072 |
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| 摘 要： | 介绍了化学气相沉积中的传质现象研究的最新进展，从传质方程的建立到边界条件确定都进行了详细的介绍，并举例说明了数值分析的结果的反应器设计与工艺参数的优化的指导作用。
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| 关 键 词： | 化学气相沉积 传质现象 CVD 反应器设计 |
On te Modelling of Transport Phenomen in CVD and Its Use in Reactor Design and Process Optimization |
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| Zhao Kang,Yan Junhui,Liu Zhengtan,Zheng Xiulin. On te Modelling of Transport Phenomen in CVD and Its Use in Reactor Design and Process Optimization[J]. Materials Review, 2000, 14(3): 13-15 |
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| Authors: | Zhao Kang Yan Junhui Liu Zhengtan Zheng Xiulin |
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| Abstract: | Review of study on the transport phenomena in chemical vapour deposition(CVD) is given in the paper,and the numerical simulation models based on fluid dynamics and reaction chemistry and boundary conditions are intrduced. Some examples of CVD models are described,and the CVD models can provide much aid in reactor design and CVD process optimization. |
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| Keywords: | chemical vapour deposition transport phenomena growth rate |
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