Molecular beam epitaxial growth of P-ZnSe:N using a novel plasma source |
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| Authors: | K. Kimura S. Miwa T. Yasuda L. H. Kuo A. Ohtake C. G. Jin K. Tanaka T. Yao |
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| Affiliation: | (1) Joint Research Center for Atom Technology, 1-1-4 Higashi, 305 Tsukuba, Japan;(2) Angstrom Technology Partnership, 1-1-4 Higashi, 305 Tsukuba, Japan;(3) National Institute for Advanced Interdisciplinary Research, 1-1-4 Higashi, 305 Tsukuba, Japan;(4) University of Tsukuba, 1-1 Tennohdai, 305 Tsukuba, Japan;(5) Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980 Sendai, Japan |
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| Abstract: | We have studied the p-type doping in ZnSe molecular beam epitaxial growth using a novel high-power (5 kW) radio frequency (rf) plasma source. The effect of growth conditions such as the rf power, the Se/Zn flux ratio and the growth temperature on p-ZnSe:N was investigated. The net acceptor concentration (NA—ND) of around 1 × 1018 cm−3 was reproducibly achieved. The activation ratio ((NA—ND)/[N]) of p-ZnSe:N with NA—ND of 1.2 × 1018 cm−3 was found to be as high as 60%, which is the highest value so far obtained for NA—ND ∼ 1018 cm−3. The 4.2K photoluminescence spectra of p-ZnSe:N grown under the optimized growth condition showed well-resolved deep donor-acceptor pair emissions even with high NA—ND. On leave from Sumitomo Electric Industry Ltd. On leave from Sony Corp. |
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| Keywords: | Molecular beam epitaxy (MBE) nitrogen doping, plasma source ZnSe |
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