TiSi2的形成及其在浅结多晶硅发射极工艺中的应用

采用蒸发淀积、快速热退火等技术，通过Ｔｉ／Ｓｉ，Ｔｉ多晶硅固相反应，形成高电导均匀的ＴｉＳｉ２薄膜，并将这种钛硅化物形成技术应用于浅结多晶硅发射极工艺中，自对准形成钛硅化物薄膜，以形成良好的欧姆接触减小器件互连线电阻。本文介绍了钛与单晶硅、多晶硅形成的硅化物及其在浅结多晶硅发射极工艺中的应用研究。

The Formation of TiSi_2 and Its Application to Shallow Junction Poly-Si Emitter Process

Silicides formed with Ti and single/poly silicon are investigated,and their applications to shallow junction polysilicon emitter process are examined in the paper.In our experiment,TiSi_2 films with uniform high conductivity are formed through the solid-phase reaction of Ti/Si and Ti/poly -Si using evaporating deposition, rapid thermal annealing(RTA)and other techniques.The self -aligned TiSi_2 film obtained greatly improves ohm-contact and reduces interconnect resistance of the device ,thus enhancing the performance of the transistor.