| Compact Threshold Voltage Model for FinFETs |
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| 引用本文： | Zhang Dawei,Tian Lilin,and Yu Zhiping. Compact Threshold Voltage Model for FinFETs[J]. 半导体学报, 2005, 26(4): 667-671 |
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| 作者姓名： | Zhang Dawei Tian Lilin and Yu Zhiping |
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| 作者单位： | 清华大学微电子学研究所 北京100084(张大伟，田立林)，清华大学微电子学研究所 北京100084(余志平) |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is performed to calculate the threshold voltage.The analysis results in a modified gate capacitance with a coefficient Ｈ introduced to model the effect of trigates and its asymptotic behavior in 2D is that for double-gate MOSFET.The potential profile obtained analytically at the cross-section agrees well with numerical simulations.A compact threshold voltage model for FinFET,comprising quantum mechanical effects,is then proposed.It is concluded that both gate capacitance and threshold voltage will increase with a decreased height,or a decreased gate-oxide thickness of the top gate，which is a trend in FinFET design.
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| 关 键 词： | FinFET 2D analytical electrostatic analysis compact model threshold voltage |
Compact Threshold Voltage Model for FinFETs |
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| Zhang Dawei,Tian Lilin,Yu Zhiping. Compact Threshold Voltage Model for FinFETs[J]. Chinese Journal of Semiconductors, 2005, 26(4): 667-671 |
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| Authors: | Zhang Dawei Tian Lilin Yu Zhiping |
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| Abstract: | A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is performed to calculate the threshold voltage.The analysis results in a modified gate capacitance with a coefficient H introduced to model the effect of tri-gates and its asymptotic behavior in 2D is that for double-gate MOSFET.The potential profile obtained analytically at the cross-section agrees well with numerical simulations.A compact threshold voltage model for FinFET,comprising quantum mechanical effects,is then proposed.It is concluded that both gate capacitance and threshold voltage will increase with a decreased height,or a decreased gate-oxide thickness of the top gate,which is a trend in FinFET design. |
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| Keywords: | FinFET 2D analytical electrostatic analysis compact model threshold voltage |
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