0.15 μm passivated InP-based HEMT MMIC technology with highthermal stability in hydrogen ambient |
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| Authors: | Chertouk M. Dammann M. Kohler K. Weimann G. |
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| Affiliation: | Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg; |
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| Abstract: | The effect of thermal stress on InP-based HEMT MMIC with Ti-Pt-Au gate metallization in N2 and H2 forming gas is reported. The importance of stabilization bake at high temperature under nitrogen to stabilize the threshold voltage and device parameters is demonstrated. In addition, through thermal stress at 270°C with hydrogen ambient, we found, that our InP based HEMT devices and MMICs with Ti-Pt-Au gate metallization are not sensitive to hydrogen. To our knowledge, this is the first demonstration of hydrogen insensitive FET's and MMIC's with Ti-Pt-Au gate metallization |
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