八毫米GaAs梁式引线肖特基势垒混频管

基于Pucel平面电容器模型和Berger平面电阻器的传输线模型(TLM),借助CAD技术,优化设计了平面型八毫米粱式引线混频管的几何参数,确定了关系到器件性能的几个关键尺寸 L_g、W_g、L_o和 L_b对总电容和串联电阻的影响.采用了类似于GaAs MESFET的制作工艺,并严格控制器件的几何参数.研制的八毫米混频管,典型结果是,在35GHz下,单管双边带噪声系数为4.8dB.

8mm GaAs Beam Lead Schottky Barrier Mixer Diode

Analytical model for 8 mm beam lead diode design is based on TLM method of planarresistor developed by Berger and planar capacitor by Pucel.The equations have been pro-grammed on computer to obtain a reasonable device design. A 8 mm beam lead mixer diode consists of a fring Schottky metal surround on three sidesby a horseshoeshoped cathode of ohmic metal.Active n-type GaAs is only in the regionsurrounding the anode contact.Under the n-region and the ohmic metalization, there are n~+GaAs layer and SI GaAs.Cr or Ti metal is used for Schottky barrier metal,Ohmic metalicAu-Ge-Ni.Device isolation uses mesa or protonimplant isolation.The technique of diodefabrication is similar to that of GaAs MESFET.The beam lead is thickened by electronplat-ing Au and every diode is obtained by chemical etching. The performance of diodes isnearly the same for the two different isolation methods.The characterization of mixer diodeshas resulted in double sideband noise figure of 4.8 db at 35 GHz.