Zinc diffusion in InAsP/InGaAs heterostructures |
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Authors: | Martin H Ettenberg Michael J Lange Alan R Sugg Marshall J Cohen Gregory H Olsen |
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Affiliation: | (1) Sensors Unlimited, Inc., 3490 U.S. Route 1, 08540 Princeton, NJ |
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Abstract: | A systematic study of the sealed ampoule diffusion of zinc into epitaxially grown InP, In0.53Ga0.47As, In0.70Ga0.30As, In0.82Ga0.18As, and through the InAsP/InGaAs interface is presented. Diffusion depths were measured using cleave-and-stain techniques,
electrochemical profiling, and secondary ion mass spectroscopy. The diffusion coefficients,
, were derived. For InP, D0=4.82 × 10−2cm2/sec and Ea=1.63 eV and for In0.53Ga0.47As, D0=2.02 × 104cm2/sec and Ea=2.63 eV. Diffusion into the heteroepitaxial structures used in the fabrication of planar PIN photodiodes is dominated by
the effects of the InP/InGaAs interface. |
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Keywords: | Indium gallium arsenide (InGaAs) indium phosphide (InP) zinc diffusion PIN photodiode |
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