An 18-34-GHz dynamic frequency divider based on 0.2-μmAlGaAs/GaAs/AlGaAs quantum-well transistors |
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| Authors: | Thiede A. Berroth M. Nowotny U. Seibel J. Bosch R. Kohler K. Raynor B. Schneider J. |
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| Affiliation: | Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg; |
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| Abstract: | The design and performance of a dynamic frequency divider was presented. This digital IC demonstrates the ability of the authors' AlGaAs/GaAs/AlGaAs quantum-well FETs with gate lengths of 0.2 μm. Stable operation was achieved in the frequency range from 18 GHz up to 34 GHz with a power consumption of 250 mW. To the authors' knowledge, this is the best result ever reported for HEMT circuits, and is similar to the frequency limit achieved by use of AlGaAs/GaAs HBTs |
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