Field emission performance of SiC nanowires directly grown on graphite substrate |
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| Authors: | Jianjun Chen Qiang Shi Weihua Tang |
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| Affiliation: | 1. The Key Laboratory of Advanced Textile Materials and Manufacturing Technology of Ministry of Education, Zhejiang Sci-Tech University, Hangzhou 310018, China;2. Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou, 310018, China |
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| Abstract: | Lawn-like SiC nanowire arrays were successfully synthesized on graphite substrates by thermal evaporation of silicon powders at high temperature. The morphology, microstructure and composition of the nanowires were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The product grown on graphite substrates was hexagonal prism-shaped single-crystal 3C-SiC nanowires with high aspect ratio. Planar defects, such as microtwins and stacking faults were observed in SiC nanowires. Field emission measurements of the SiC nanowires grown on graphite substrate showed a very low threshold field of 2.1 V μm−1, high brightness and stable field emission performance. |
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| Keywords: | Semiconductors Crystal growth Electron microscopy Field emission |
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