Finite element analysis of temperature distribution of polycrystalline silicon thin film transistors under self-heating stress |
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| Authors: | Huaisheng Wang Mingxiang Wang Zhenyu Yang |
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| Affiliation: | (1) Department of Microelectronics, Soochow University, Suzhou, 215021, China |
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| Abstract: | The temperature distribution of typical n-type polycrystalline silicon thin film transistors under self-heating (SH) stress is studied by finite element analysis. From both steady-state and transient thermal simulation, the influence of device power density, substrate material, and channel width on device temperature distribution is analyzed. This study is helpful to understand the mechanism of SH degradation, and to effectively alleviate the SH effect in device operation. __________ Translated from Journal of Semiconductors, 2008, 29(5): 954–959 [译自: 半导体学报] |
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| Keywords: | finite element analysis (FEA) temperature distribution thin film transistors self-heating steady-state transient state |
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