| 溅射工艺参数对PZT铁电薄膜相变过程的影响 |
| |
| 引用本文： | 曾晟,丁爱丽,仇萍荪,何夕云,罗维根.溅射工艺参数对PZT铁电薄膜相变过程的影响[J].无机材料学报,1999,14(1):107-113. |
| |
| 作者姓名： | 曾晟 丁爱丽 仇萍荪 何夕云 罗维根 |
| |
| 作者单位： | 中国科学院上海硅酸盐研究所,上海,200050 |
| |
| 摘 要： | 采用射频磁控溅射工艺，在（１１１）Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ衬底上用ＰＺＴ（５３／４７）陶瓷靶制备铁电薄膜。用快速光热退火炉对原位沉积的薄膜进行ＲＴＡ处理。
|
| 关 键 词： | 射频磁控溅射 铁电薄膜 钙钛矿相 PZT 相变 |
| 收稿时间： | 1998-2-25 |
| 修稿时间： | 1998-4-15 |
Effect of Sputtering Parameters on Phase Transformation of PZT Thin Films |
| |
| ZENG Sheng,DING Ai-Li,QIU Ping-Sun,HE Xi-Yun,LUO Wei-Gen.Effect of Sputtering Parameters on Phase Transformation of PZT Thin Films[J].Journal of Inorganic Materials,1999,14(1):107-113. |
| |
| Authors: | ZENG Sheng DING Ai-Li QIU Ping-Sun HE Xi-Yun LUO Wei-Gen |
| |
| Affiliation: | ShanghaiInstituteofCeramics;ChineseAcademyofSciencesShanghai200050China |
| |
| Abstract: | PZT thin films were fabricated on (111)Pt/Ti/SiO2/Si by RF magnetron sputtering witha ceramic target(PZT53/47). The as-deposited thin films were annealed with a rapid thermalannealing process. XRD was used to determine the structure of the thin films. This paper focusedon the research about the influence of sputtering gas and substrate temperature on the structureof the thin films. It was found that the process of phase transformation of PZT thin films changedwith the ratio of Ar to O2 and substrate temperatures. The ferroelectric property of PZT thin filmswas measured by RT66A standardized ferroelectric test system. When 5V voltage was applied, thefilm showed a remnant polarization of 14.6C/cm2, and coercive field of 82.9kV/cm. |
| |
| Keywords: | RF magnetron sputtering ferroelectric thin film pyroclore perovskite |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《无机材料学报》浏览原始摘要信息 |
|
点击此处可从《无机材料学报》下载全文 |
|
