TaSi2 nanowires: A potential field emitter and interconnect |
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Authors: | Chueh Yu-Lun Ko Mong-Tzong Chou Li-Jen Chen Lih-Juann Wu Cen-Shawn Chen Chii-Dong |
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Affiliation: | Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China. |
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Abstract: | TaSi2 nanowires have been synthesized on a Si substrate by annealing NiSi2 films at 950 degrees C in an ambient containing Ta vapor. The nanowires could be grown up to 13 microm in length. Field-emission measurements show that the turn-on field is low at 4-4.5 V/microm and the threshold field is down to 6 V/microm with the field enhancement factor as high as 1800. The metallic TaSi2 nanowires exhibit excellent electrical properties with a remarkable high failure current density of 3 x 10(8) A cm(-2). In addition, effects of annealing temperatures and capability of metal silicide mediation layer on the growth of nanowires are addressed. This simple approach promises future applications in nanoelectronics and nano-optoelectronics. |
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