| 下世纪初LSI技术发展动向 |
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| 引用本文： | 成英. 下世纪初LSI技术发展动向[J]. 微纳电子技术, 1999, 0(2) |
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| 作者姓名： | 成英 |
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| 作者单位： | 信息产业部电子十三所 |
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| 摘 要： | 详细探讨了未来１５年半导体市场及半导体核心技术的发展动向。在器件尺寸小型化方面，着重需要解决１００ｎｍ的技术课题。
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| 关 键 词： | LSI技术 发展预测 |
Development Tendency of LSI Technology |
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| Cheng Ying. Development Tendency of LSI Technology[J]. Micronanoelectronic Technology, 1999, 0(2) |
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| Authors: | Cheng Ying |
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| Abstract: | The developmental tendency of semiconductor market and key technologies in futural 15 years is presented in detail.In device miniturization ,the subject of breakthrough 100nm should be solved in the near future. |
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| Keywords: | LSI technology Development tendency |
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